RF Power Amplifiers - Silicon Bipolar & MOSFET

RF Power Transistors - Si

MACOM offers a broad range of silicon based RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our silicon bipolar and MOSFET high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all gold metallization fabrication processes ensures high performance and long term reliability for ground and space applications.

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topOrder releaseDate Part Number Ordering Short Description Min Frequency (MHz) Max Frequency (MHz) Bias Voltage (V) Pout (W) Gain (dB) Efficiency (%) Type Package Package Category Datasheet Lead-Free Application Notes Features Product Image Duty Cycle (%) Pulse Width (μS)
 
 
 
 
 
 
 
 
999 2007/10/15 MAPR-001090-350S00 Buy Avionics Pulsed Power Transistor 350W, 1025-1150 MHz, 10?μs Pulse, 1% Duty
1025 1150 50 350 9 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MAPR-001090-350S00.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Gold Metallizsation System

Diffused emitter ballasting Resistor

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Confirguration

Hermetic Metal/cCeramic Package

Internal Input and Output Impedance Matching

RoHS Compliant

MAPR-001090-350S00_355E-01 Style 1 Ceramic.JPG
999 2007/08/15 MAPR-001011-850S00 Inquire Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10?μs Pulse, 1% Duty
1025 1150 50 850 7.8 42 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MAPR-001011-850S00.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Diffused Emitter ballasting resistors

High efficiency Inter-Digitized Geometry

Broadband Class C operation

Common Base Configuration

Hermetic Metal/ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

RoHS Compliant

MAPR-00xxxx.jpg
999 2007/02/01 MAPR-000912-500S00 Buy Avionics Pulsed Power Transistor 500W, 960-1215 MHz, 10μs Pulse, 10% Duty
960 1215 50 500 9 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MAPR-000912-500S00.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistor

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

RoHS compliant

MAPR-00xxxx.jpg
999 2006/12/10 MAPR-002729-170M00 Buy Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
2700 2900 36 170 8.5 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MAPR-002729-170M00.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

MAPR-002729-170M00.JPG
999 2006/12/09 MAPRST0912-50 Buy Avionics Pulsed Power Transistor 50W, 960-1215 MHz, 10μs Pulse, 10% Duty
960 1215 50 50 9.1 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MAPRST0912-50.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Gold Metallization System

Diffused Emitter Ballasting Resistor

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Out Impedance Matching

MAPRST0912-50.JPG
999 2006/09/30 MAPRST0912-350 Buy Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10μs Pulse, 10% Duty
960 1215 50 350 9.4 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MAPRST0912-350.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

MAPRST0912-350.JPG
999 2006/01/30 MAPRST1030-1KS Buy Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10μs Pulse, 1% Duty
1030 1030 50 1000 8 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MAPRST1030-1KS.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Diffused Emitter Ballasting Resistor

High efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

RoHS Compliant

MAPRST1030-1KS.JPG
999 2004/12/27 MRF428 Buy The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
1 30 50 150 13 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF428.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 DB, Efficiency = 45%

Intermodulation distortion @ 150 W (PEP): IMD = -30 db (max.)

100% Tested Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW

MRF428-CASE-211-07-STYLE-1.JPG
999 2003/05/30 PHA2729-300M Inquire 1 Radar Pulsed Power Module 300W, 2.7-2.9 GHz, 100μs Pulse, 10%Duty
2700 2900 38 300 7.5 36 Module
Pallet
Pallet
PHA2729-300M.pdf
No
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Includes RC Bias circuit

MTTF > 1x106 hrs @ Tflange=45 °C

Nickel Plated Copper Flange

Soft substrate eR=10.5

Input and output matched to 50 W

In-Phase combined pulsed power transistors

PHA2729-300M.JPG
10 100
999 2003/03/17 PH3134-55L Buy Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300μs Pulse, 10% Duty
3100 3400 36 55 7.5 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH3134-55L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH3134-55L.JPG
999 2003/01/29 MRF176GU Buy The RF MOSFET Line 200/150W, 500MHz, 50V
5 400 50 150 12 45 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF176GU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix); Output power — 150 W, Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)

MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (typ. Efficiency — 55% typ.

MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)

Low Crss — 7.0 pF Typ @ VDS = 50 V

Low Thermal Resistance

100% Ruggedness Tested at Rated Output Power

MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
999 2002/10/21 MRF151A Buy MOSFET
5 175 150 13 40 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF151A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN4001 - 300 Watt Class E Amplifier Using MRF151A
Enhanced Thermal Performance

Higher Power Dissipation

Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%

Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability

MRF151A - Case P.JPG
999 2002/06/09 PH3134-20L Inquire Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300μs Pulse, 10% Duty
3100 3400 36 20 7.5 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH3134-20L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

Broadband Class C Operation

Common Base Configuration

PH3134-20L.JPG
999 2001/12/24 PH1214-300M Buy Radar Pulsed Power Transistor 300W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
1200 1400 40 300 8.75 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-300M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

PH1214-300M.JPG
999 2001/10/24 MRF1004MB Buy Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
960 1215 35 4 10 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF1004MB.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 1090 MHz, 35 Vdc

Output Power = 4.0 W Peak

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Nitride Passivated

Industry Standard Package

100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

Minimum Gain = 10 dB

Internal Input Matching for Broadband Operation

MRF1004MB-CASE-332A-03-STYLE-1.JPG
999 2001/10/24 MRF175LU Buy The RF MOSFET Line 100W, 400MHz, 28V
5 400 28 100 8 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF175LU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Guaranteed Performance: MRF175LU @ 28 V, 400 MHz (“U” Suffix), Output power — 100 W, Power gain — 10 dB (Typ.), Efficiency — 55% (Typ.)

Low Crss — 20 pF Typ @ VDS = 28 V

Low Thermal Resistance

100% Rruggedness Tested at Rated Output Power

MRF175LU-CASE-333-04-STYLE-2.JPG
999 2001/10/24 MRF176GV Buy The RF MOSFET Line 200/150W, 500MHz, 50V
5 225 50 200 15 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF176GU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix), Output Power — 150 W,Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)

MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)

Low Crss — 7.0 pF Typ @ VDS = 50 V

Low Thermal Resistance

100% Ruggedness Tested at Rate Output Power

MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
999 2001/09/29 MRF140 Buy The RF MOSFET Line 30W, to 400MHz, 28V
5 150 28 150 15 40 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF140.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode

IMD(d11) (150 W PEP): –60 dB (Typ.)

Superior High Order IMD

Specified 28 Volts, 30 MHz Characteristics - Output power = 150 watts, Power gain = 15 dB (Typ.), Efficiency = 40% (Typ.)

100%Test for Load Mismatch at all Phase with 30:1 VSWR

IMD(d3) (150 W PEP): –30 dB (Typ.)

MRF140 - Case 211-11 Style 2.JPG
999 2001/10/14 MRF321 Buy The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V
200 500 28 10 12 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF321.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance at 400 MHz, 28 Vdc: Output Power = 10 W, Power Gain = 12 dB min., Efficiency = 50% min.

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc

Computer–controlled wirebonding gives consistent input Impedance

Gold Metallization System for High Reliability

MRF-321-CASE-244-04-STYLE-1.JPG
999 2001/10/26 2N6439 Buy The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V
225 400 28 60 7.8 55 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
2N6439.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance in 225 to 400 MHz broadband amplifier @ 28 Vdc: Output Power = 60 W over 225 to 400 MHz band, Minimum Gain = 7.8 dB @ 400 MHz

Gold Metallization System for High Reliability Application

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc

Built–In Matching Network for Broadband Operation using Double Match Technique

2N6439 - Case 316 -.JPG
999 2001/09/20 MRF421 Buy The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V
2 30 12.5 100 10 40 Bipolar
Flange Ceramic Pkg
Flange Mount
MRF421.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 12.5 V, 30 MHz characteristics: Output Power= 100 W (PEP), Minimum Gain = 10 dB, Efficiency = 40%

Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (min.)

100% Tested for Load Mismatch at all Phase Angelswith 30:1 VSWR

MRF421-CASE-211-11-STYLE-1.JPG
999 2001/09/20 MRF429 Buy The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
2 30 50 150 13 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF429.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45%

Diffused emitter resistors for superior ruggedness

Intermodulation distortion @ 150 W (PEP): IMD = –32 dB (Max)

100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW

999 2001/09/20 MRF175GU Buy The RF MOSFET Line 200/150W, 500MHz, 28V
5 400 28 150 12 55 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF175GU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance: Output Power — 200 W, Power Gain — 14 dB (Typ.) Efficiency — 65% (Typ.)

100% RuggednessTested at a Rated output Power

MRF175GV @ 28 V, 225 MHz (“V” Suffix)

Low Crss — 20 pF typ @ VDS = 28 V

Low Thermal Resistance

MRF175GU - Case 375-04 Style 2.JPG
999 2001/09/09 MRF148A Buy Linear RF Power MOSFET 30W, to 175MHz, 50V
5 175 50 30 18 40 TMOS
Flange Ceramic Pkg
Flange Mount
MRF148A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Superior High Order IMD - IMD(d11) (30W PEP): –60 dB (Typ.), IMD(d3) (30W PEP): –35 dB (Typ.)

100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR

Lower Reverse Transfer Capacitance (3.0 pF typ.)

Specified 50V, 30MHz characteristics:18dB (Typ.), Output power: 30W, Efficiency: 40% (Typ.)

MRF148A - Case 211-07, Style 2.JPG
999 2001/09/15 MRF173CQ Buy The RF MOSFET Line 80W, 175MHz, 28V
5 175 28 80 11 55 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF173CQ.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Excellent Thermal Stability; Suited for Class A Operation

Low Noise Figure— 1.5 dB (Typ.) at 2.0 A, 150 MHz

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Low Thermal Resistance

Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% Min. (60% Typ.)

MRF173CQ - Case 316-01 Style 2.JPG
999 2001/09/20 PH1214-55EL Buy Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty
1200 1400 28 55 6.6 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-55EL.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-55EL.JPG
999 2001/09/17 MRF141 Buy RF Power MOSFET 150W, to 175MHz, 28V
5 175 28 150 18 40 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF141.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed performance at 30 MHz, 28V: Output Power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%

Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB

Low Thermal Resistance

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

MRF141- Case 211-11 Style 2.JPG
999 2001/09/12 MRF422 Buy The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V
2 30 28 150 10 40 Bipolar
Flange Ceramic Pkg
Flange Mount
MRF422.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Efficiency = 40%, Minimum Gain = 10 dB

Intermodulation Distortion @ 150 W (PEP) —IMD = –30 dB (min.)

100% Test for Load Mismatch at all Phase Angelswith 30:1 VSWR

MRF422-CASE-211-11-STYLE-1.JPG
999 2001/09/18 MRF313 Buy The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V
400 400 28 1 15 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF313.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
Specified 28 V, 400 MHz Characteristics: Output Power = 1.0 W, Power Gain = 15 dB min.,Efficiency = 45% (Typ.)

Emitter Ballast and Low Current Destiny for Improved MTBF

Common Emitter for Improved Stability

MRF313 - Case 305-01 Style 2.JPG
999 2001/09/23 MRF323 Buy The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V
200 500 28 20 10 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF323.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min.

Gold Metallization System for High Reliability

100% Tested for Load Mismatch at all phase Angels with 30:1 VSWR ?

Computer Controlled Wirebonding Gives Consistent Input Impedance

MRF-323-CASE-244-04-STYLE-1.JPG
999 2001/09/09 MRF136Y Buy The RF MOSFET Line 30W, to 400MHz, 28V
5 400 28 30 12 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF136Y.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode

100%Test for Load Mismatch at all Phase Angels with 30:1 VSWR

Small and Large Signal characterization

Guaranteed 28 Volt, 150 MHz Performance - Output Power = 30 Watts Broadband Gain = 14 dB (Typ.) Efficiency = 54% (Typ.)

Facilitates Manual Gain Control ALC and Modulation Techniques

Excellent Thermal Stability, Ideally Suited for Class A Operation

Space Saving Package for Push–:Pull Circuit Applications

MRF136Y - Case 319 B-02 Style 1.JPG
999 2001/09/05 MRF174 Buy The RF MOSFET Line 125W, 200MHz
5 200 125 9 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF174.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc

Facilitates Manual Gain Control, ALC and Modulation Techniques

Excellent Thermal Stability; ideally Suite for Class A Operations

Guaranteed Performance at 150 MHz, 28 Vdc: Output power = 125 W, Minimum gain = 9.0 dB,Efficiency = 50% (min.)

Low Noise Figure — 3.0 dB (Typ.) at 2.0 A, 150 MHz

MRF174- Case 211-02 Style 2.JPG
999 2001/09/08 MRF327 Buy NPN, Power Transistor 80W, 100 to 500MHz, 28V
100 500 28 80 7.3 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF327.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 400 MHz, 28 Vdc: Output Power = 80 W over 225 to 400 MHz Band, Minimum Gain = 7.3 dB @ 400 MHz

Characterized for 100 =8 500 MHz

Gold Metallization System for High Reliability applications

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Built–In Matching Network for Broadband Operation using Double Match Technique

MRF327-CASE-316-01-STYLE-1.JPG
999 2001/09/06 MRF158 Buy The Broadband RF MOSFET Line 2W, 500MHz, 28V
5 500 28 2 16 55 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF158.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode

Guaranteed 28 volt, 500 MHz Performance: Output Power = 2.0 Watts, Minimum Gain = 16 dB (Min.), Efficiency = 55% (Typ.)

Facilitates Manual Gain Control, ALC and Modulation Techniques

100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR

Excellent Thermal Stability Ideally Suited for Class A Operation

MRF158 - Case 305-01 Style 2.JPG
999 2001/08/29 MRF173 Buy The RF MOSFET Line 80W, 175MHz, 28V
5 175 28 80 11 55 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF173.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Low Thermal Resistance

Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.)

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Excellent Thermal Stability, Suite for Class A Operation

Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz

MRF173- Case 211-11 Style 2.JPG
999 2001/09/04 MRF175GV Buy The RF MOSFET Line 200/150W, 500MHz, 28V
5 225 28 200 14 65 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF175GU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Low Crss — 20 pF typ @ VDS = 28 V

Low Thermal Resistance

100% Ruggedness Test at Rate Output Power

Guaranteed Performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),Output power — 200 W, Power Gain — 14 dB (Typ.), Efficiency — 65% (Typ.)typ

MRF175GU - MRF175GV Case 375-04 Style 2.JPG
999 2001/08/31 MRF177 Buy The RF MOSFET Line 100W, 400MHz, 28V
5 400 28 100 12 60 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF177.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Excellent Thermal Stability; Suited for Class A Operation

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Low Crss — 10 pF typ. @ VDS = 28 V

Low Thermal Resistance

Typical Performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%

MRF177-CASE-744A-01-STYLE-2.JPG
999 2001/08/23 MRF455 Buy The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V
2 30 12.5 60 13 55 Bipolar
Flange Ceramic Pkg
Flange Mount
MRF455.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 12.5 V, 30 MHz Characteristics:

Efficiency = 55%

Minimum Gain = 13 dB

Output Power = 60 W

MRF455 - Case 211-07 Style 1.JPG
999 2001/08/25 MRF316 Buy The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V
30 200 28 80 10 55 Bipolar
Flange Ceramic Pkg
Flange Mount
MRF316.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed performance at 150 MHz, 28 Vdc: Output Power = 80 W, Minimum Gain = 10 dB

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Built–in Matching Network for Broadband Operation

Gold Metallization System for High Reliability Applications

MRF316 -Case 316.JPG
999 2001/08/27 MRF426 Buy 1 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
2 30 28 25 22 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF426.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 28 V, 30 MHz Characteristics: Output Power= 25 W (PEP), , Minimum Gain = 22 dB, Efficiency = 35%

Intermodulation Distortion @ 25 W (PEP) —IMD = –30 dB (max)

Class A and AB Characterization

100% Tested for Load Mismatch at all Phase Angels with 30:1 VSWR

BLX 13 Equivalent

MRF426-CASE-211-11-STYLE-1.JPG
999 2001/08/23 MRF392 Buy NPN, Power Transistor 80W, 100 to 500MHz, 28V
100 400 28 125 10 55 Bipolar
Flange Ceramic Pkg
Flange Mount
MRF392.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 28 V, 400 MHz characteristics: Output Power = 125 W, Typical Gain = 10 dB, Efficiency = 55% (Typ.)

Gold Metallization System for High Reliability

Push–Pull Configuration Reduces Even Numbered Harmonics

Built–Input Impedance Matching Networks for Broadband Operations

100% Tested for Load Mismatch

MRF392-CASE-744A-01-STYLE-2.JPG
999 2001/08/25 MRF10031 Buy Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V
960 1215 36 30 9 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF10031.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance@ 960-1215MHz, 36Vdc

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Silicon Nitride Passivated

Hermetically sealed, industry standard package

100%Tesdted for Load Mismatch all Phase Angles with 10:1 VSWR

Minimum Gain: 9.0dB min., 9.5dB typ.

Output Power: 30W peak

Internal Input Matching for Broadband Operation

MRF10031-CASE-332A-03-STYLE-2.JPG
999 2001/08/27 MRF454 Buy The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V
2 30 12.5 80 12 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF454.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 12.5 V, 30 MHz characteristics:

Efficiency = 50%

Minimum gain = 12 dB

Output power = 80 W

MRF454-CASE-211-11-STYLE-1.JPG
999 2001/08/23 MRF10005 Buy Microwave Power Silicon Bipolar Transistor 5.0 W, 960–1215 MHz, 28V
960 1215 28 5 8.5 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF10005.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @1.215GHz, 28Vdc

Hermetically Sealed Industry Standard Package

100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR

RF Performance Curves for 28 Vdc and 36 Vdc Operation

Minimum Gain = 8.5dB, 10.3dB (Typ.)

Output Power: 5.0W CW

Internal Input Matching for Broadband Operation

Gold Metallized, Emitter Ballasted for Long Life and Rresistance to Metal Migration

Silicon Nitride Passivated

MRF10005-CASE-336E-02-STYLE-1.JPG
999 2001/08/27 MRF393 Buy NPN, Power Transistor 100W, 30 to 500MHz, 28V
30 500 28 100 9.5 55 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF393.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 28 V, 500 MHz Characteristics: Output Power = 100 W, Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C), Efficiency = 55% (Typ.)

Gold Metallization System for High Reliability

Push–Pull Configuration Reduces Even Numbered Harmonics

Built–In Input Impedance Matching Networks for Broad Operatons

100% Test for Load Mismatch

MRF393-CASE-744A-01-STYLE-2.JPG
999 2001/08/23 MRF314 Buy The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V
30 200 28 30 10 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF314.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB

Gold Metallization System for High Reliability Applications

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

MRF314 - Case 211-07 Style 1.JPG
999 2001/08/16 MRF317 Buy The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V
30 200 28 100 9 55 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF317.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance at 150 MHz, 28 Vdc: Output Power = 100 W, Minimum Gain = 9.0 dB

Gold Metallization System for High Reliability Applications

100% Test for Load at all Phase Angels with 30:1 VSWR

Built–in matching network for broadband operation

Guaranteed Performance in Broadband Test Fixture

Peak AM Amplifier Service

High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W

MRF317 -Case 316.JPG
999 2001/08/22 MRF10120 Buy Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
960 1215 36 120 8 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF10120.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 1.215 GHz, 36 Vdc

Silicon Nitride Passivated

Hermetically Sealer Industry Standard Package

100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR

Gain = 7.6 dB min., 8 .5 dB (typ.)

Output Power = 120 W Peak

Internal Input and Output Matching for Broadband Operation

Gold Metalized, Emitter Ballasted for Long Life and resistance to Metal Migration

MRF10120-CASE-355C-02-STYLE-1.JPG
999 2001/08/22 MRF587 Buy The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
100 500 15 0.17 11 12 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF587.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Low Noise Figure: NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA

Low Intermodulation Distortion: TB3 = –70 dB, DIN = 125 dB μV

High Power Gain: GU(max) = 16.5 dB (typ.) @ f = 500 MHz

All Gold Metal System

Ion Implanted

High fT — 5.5 GHz

Nichrome Emitter Ballast Resistors

999 2001/08/21 MRF134 Buy The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V
5 400 28 5 11 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF134.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode

Guaranteed 28V, 150 MHz Performance Output Power = 5.0 watts Minimum Gain = 11 dB Efficiency = 55% (Typ.

Smal land Large Signal Characterization

Typical Performance at 400 MHz, 28V, 5.0W Output = 10.6 dB gain

100% Test for Load Mismatch at all Phase Angles with 30:1 VSWR

Low Noise Figure: 2.0 dB (Typ.) at 200 mA, 150 MHz

Excellent Thermal Stability, Ideally Suited for Class A Operation

100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR

MRF134 - Case 211-07, Style 2.JPG
999 2001/08/21 MRF166W Buy The RF MOSFET Line 40W, 500MHz, 28V
30 500 28 40 14 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF166W.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode MOSFET

Typical performance at 175 MHz, 28 Vdc: Output power = 40 W, Gain = 17 dB, Efficiency = 60%

Push–Pull Configuration Reduces Even Numbered Harmonics

Low Crss — 4.0 pF @ VDS = 28 V

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Facilitates Manual Gain Control, ALC and Modulation Techniques

Excellent Thermal Stability Ideally Suited for Class A Operation

Guaranteed performance at 500 MHz, 28 Vdc: Output power = 40 W, Gain = 14 dB, Efficiency = 50%

MRF166W-CASE-412-01-STYLE-1.JPG
999 2001/08/16 MRF141G Buy RF Power MOSFET 300W, 175MHz, 28V
5 175 28 300 12 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF141G.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Low Thermal Resistance: 0.35°C/W

MRF141G - Case 375-04 Style 2.JPG
999 2001/08/15 MRF151 Buy RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
5 175 50 150 13 40 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF151.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%

Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability

MRF151.pdf
999 2001/08/16 MRF10150 Buy Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz
1025 1150 50 150 9.5 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF10150.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A

Recommended Driver for a Pair of MRF10500 Transistors

Characterized with 10 μs, 10% Duty Cycle Pulses

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Silicon Nitride Passivated

Hermetically Sealed Package

100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR

Gain = 9.5 dB min, 10.0 dB (typ.)

Output Power = 150 W Peak

Internal Input and Output Matching

MRF10150-CASE-376B-02-STYLE-1.JPG
999 2001/08/21 MRF166C Buy The RF MOSFET Line 20W, 500MHz, 28V
5 500 28 20 13.5 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF166C.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W, Gain = 13.5 dB, Efficiency = 50%

Replacement for Industry Standards such as MRF136, V2820, BLF244, SD1902, and ST1001

100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR

Low Crss — 4.0 pF @ VDS = 28 V

Facilitate Manual Gain Control, ALC and Modulation Techniques

MRF166C - Case 319-07 Style 3.JPG
999 2001/08/09 MRF150 Buy RF Power MOSFET 150W, to 150MHz, 50V
5 150 50 150 17 45 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF150.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Superior High Order IMD - IMD(d3) (150W PEP): –32dB (Typ.), IMD(d11) (150W PEP): –60dB (Typ.)

Specified 50V, 30MHz Characteristics - Output Power = 150 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)

100% Test for Load Mismatch at all Phase Angels

MRF150- Case 211-11 Style 2.JPG
999 2001/08/12 MRF448 Buy The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
2 30 50 250 12 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF448.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45%

100% Test for Load Mismatch at all Phase Angels with 3:1 VSWR

Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)

MRF448.png
999 2001/07/29 MRF275G Buy The RF MOSFET Line 150W, 500MHz, 28V
100 500 28 150 10 50 TMOS
Flange Ceramic Pkg
Flange Mount
MRF275G.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1

Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF

Typical Data for Power Amplifiers in Industrial and Commercial Applications:

Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65%

Simplified AVC, ALC and Modulation

Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60%

Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)

MRF275G Case 375-04 Style 2.JPG
999 2001/08/12 MRF137 Buy The RF MOSFET Line 30W, to 400MHz, 28V
5 400 28 30 13 60 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF137.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed 28 V, 150 MHz Performance - Output power = 30 W Minimum Gain = 13 dB Efficiency — 60% (Typ.)

100% Test for Load Mistmatch at all Phase Angels with 30:1 VSWR

Typical Performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain

Small and Large Signal Characterization

Excellent Thermal Stability, Ideally Suite for Class A Operation

Low Noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz

Facilitates Manual Gain Control, ALC and Modulation Techniques

MRF137 - Case 211-07, Style 2.JPG
999 2001/08/04 MRF10350 Buy Bipolar
1025 1150 50 350 8.5 40 Bipolar
Flange Ceramic Pkg
Flange Mount
MRF10350.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 1090 MHz - Output Power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)

Silicon Nitride Passivated

Hermetically Sealed Package

100%Tested for Load Mismatch at all Phases Angels with 10:1 VSWR

Characterized Using Mode-S Pulse Format

Internal Input and Output Matching

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

MRF10350-CASE-355E-01-STYLE-1.JPG
999 2001/07/14 MRF151G Buy 1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
5 175 50 300 14 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF151G.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance at 175 MHz, 50 V:

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Low Thermal Resistance — 0.35°C/W

Efficiency — 50%

Gain — 14 dB (16 dB Typ)

Output Power — 300 W

MRF151G.jpg
999 2001/07/23 MRF160 Buy The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
30 500 28 4 16 55 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF160.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode MOSFET

Guaranteed 28 V, 500 MHz Performance: Output Power = 4.0 W,Gain = 16 dB (min.), Efficiency = 55% (Typ.)

100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR

Facilitates Manual Gain Control, aLS and Modulation Techniques

Excellent Thermal Stability, Ideally Suite for Class A Operation

Low Crss – 0.8 pF Typical at VDS = 28 V

MRF160 - Case 249-06 Style 3.JPG
999 2001/07/14 MRF157 Buy Linear RF Power MOSFET 600W, to 80MHz
5 80 600 21 45 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF157.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 50 volts, 30 MHz characteristics

Efficiency = 45% (typ.)

Power gain = 21 dB (typ.)

Output power = 600 watts

MRF157 - Case 368-03 Style 2.JPG
999 2001/07/14 MRF154 Buy Broadband RF Power MOSFET 600W, to 80MHz, 50V
2 100 50 600 17 45 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF154.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode MOSFET

Specified 50 volts, 30 MHz Characteristics - Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)

MRF154 - Case 368-03 Style 2 HOG PAC.JPG
999 2001/08/08 MRF171A Buy The RF MOSFET Line 45W, 150MHz, 28V
100 200 28 45 17 60 TMOS
Flange Ceramic Pkg
Flange Mount
MRF171A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Excellent Thermal Stability Suited for Cass A Operation

Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, Power gain = 17 dB (min)' Efficiency = 60% (min)

Typical Data for Power Amplifiers Applications in Industrial, Commercial and Amateur Radio Equipment:

Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (Typ.)

Gold Top Metal

Low Crss – 8 pF @ VDS = 28 V

100%Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Facilitates Manual Gain Controll, ALC and Modulation Techniques

MRF170A - Case 211-07, Style 2.JPG
999 2001/07/14 MRF275L Buy The RF MOSFET Line 100W, 500MHz, 28V
5 500 28 100 8.8 55 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF275L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Low Thermal Resistance

100% Ruggedness Tested at Rated Output Power

Guaranteed performance @ 500 MHz, 28 Vdc: Output Power — 100 W, Power gain — 8.8 dB (Typ.), Efficiency — 55% (Typ.)

Low Crss — 17 pF typ. @ VDS = 28 V

MRF275L-CASE-333-04-STYLE-2.JPG
999 2001/07/14 MRF1090MB Buy Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz
960 1215 50 90 8.4 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF1090MB.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 W Peak Minimum Gain = 8.4 dB

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Nitride Passivated

Industry Standard Package

100%Test for Load Mismatch at all Phase Angelswith 10:1 VSWR

Internal Input and Output Matching

MRF1090MB-CASE-332A-03-STYLE-1.JPG
999 2001/07/14 MRF10502 Buy Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz
1025 1150 50 500 8.5 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF10502.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 1090 MHz - Output Power = 500 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)

Internal Input and Output Matching

Gold Metalized, Emitter, Ballested for Long Life and Metal Migration

Silicon Nitride Passivated

Hermetically Sealed Industry Packaging

100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

Characterized with 10μs, 1% Duty Cycle Pulses

MRF10502-CASE-355J-02-STYLE-1.JPG
999 2001/07/14 MRF1150MB Buy Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz
960 1215 50 150 7.8 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF1150MB.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 1090 MHz, 50 Vdc - Output Power = 150 W Peak Minimum gain = 7.8 dB

Nitride Passivated

Industry Standard Package

100%Test for Load Mismatch at all Phase Angels with 10:1 VSWR

Internal Input Matching for Broadband Operation

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

MRF1150MB-CASE-332A-03-STYLE-1.JPG
999 2001/07/14 MRF1000MB Buy Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960–1215 MHz, 18V
960 1215 18 0.2 10 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF1000MB.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Nitride Passivated

Industry Standard Package

100%Tested for Load Mismatch at all Phase Angles with 10:1 VSWR

Minimum Gain: 10dB

Output Power: 0.2W

Internal input matching for broadband operation

MRF1000MB-CASE-332A-03-STYLE-2.JPG
999 2001/06/09 DU28120T Buy RF Power MOSFET Transistor 120W, 2-175MHz, 28V
2 175 28 120 13 60 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU28120T.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

Lower noise figure than bipolar devices

High saturated output power

Lower capacitances for broadband operation

DMOS structure

RF T SI - DU28120T.JPG
999 2001/05/05 PH1090-700B Buy Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32μs Pulse, 2% Duty
1030 1090 50 700 7.5 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1090-700B.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Common Base Configuration

Broadband Class C Operation

PH1090-700B.jpg
999 2001/01/28 MRF136 Buy The RF MOSFET Line 15W, to 400MHz, 28V
5 400 28 15 13 50 TMOS
Flange Ceramic Pkg
Ceramic Flange Mount
MRF136.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode

Excellent Thermal Stability Suited for Cass A Operation

100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR

Small and Large Signal Characterization

Guaranteed 28 Volt, 150 MHz Performance - Output Power = 15 Watts Narrowband Gain = 16 dB (Typ.) Efficiency = 60% (Typ.)

Facilities Manaul Gain Control, ALC and Modulation Techniques

MRF136 - Case 211-07, Style 2.JPG
999 2001/01/26 PH1090-15L Buy Avionics Pulsed Power Transistor 15W, 1030-1090 MHz, 250μs Pulse, 10% Duty
1030 1090 45 15 9 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1090-15L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

PH1090-15L.JPG
999 2001/02/18 PH2729-65M Buy Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
2700 2900 36 65 8.5 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH2729-65M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2729-65M.jpg
999 2000/12/14 PH1214-12M Buy Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
1200 1400 28 12 8.5 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-12M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-12M.JPG
999 2000/12/08 DU2880U Buy RF Power MOSFET Transistor 80W, 2-175MHz, 28V
2 175 28 80 13 60 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU2880U.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

RF PT- SI _ DU2860U.JPG
999 2000/11/26 DU1215S Buy RF Power MOSFET Transistor 15W, 2-175MHz, 12V
2 175 12 15 9.5 60 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU1215S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

Specifically designed for 12 volt applications

Lower noise figure than bipolar devices

High saturated output power

Lower capacitances for broadband operation

DMOS structure

RF PT SI _DU1215S.JPG
999 2000/09/20 PH3134-10M Buy Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100μs Pulse, 10% Duty M
3100 3400 36 10 8 35 Bipolar
Flange Ceramic Pkg
Flange Mount
PH3134-10M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

PH3134-10M.JPG
999 2000/09/25 PH1214-25M Buy Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
1200 1400 28 25 9.5 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-25M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-25M.JPG
999 2000/09/14 PH3135-25S Buy Radar Pulsed Power Transistor 25W, 3.1-3.5 GHz, 2μs Pulse, 10% Duty
3100 3500 36 25 7.5 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH3135-25S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH3135-25S.JPG
999 2000/09/08 PH2729-130M Buy Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
2700 2900 36 130 7.5 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH2729-130M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

MAPR-00xxxx.jpg
999 2000/09/10 PH1214-110M Buy Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
1200 1400 40 110 7.4 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-110M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-110M.JPG
999 2000/09/04 DU2810S Buy RF Power MOSFET Transistor 10W, 2-175MHz, 28V
2 175 28 10 13 55 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU2810S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Low Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS structure

RF PT- SI _DU2810S.JPG
999 2000/09/04 DU2880T Buy 1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V
2 175 28 80 13 60 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU2880T.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturated Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

RF PT- SI DU2880T.JPG
999 2000/09/03 PH1090-550S Buy Avionics Pulsed Power Transistor 550W, 1090 MHz, 10μs Pulse, 1% Duty
1030 1090 50 550 7.4 55 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1090-550S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1090-550S.jpg
999 2000/09/01 PH1214-2M Buy Radar Pulsed Power Transistor 2W, 1.2-1.4 GHz, 100μs Pulse, 10% Duty
1200 1400 28 2 7 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-2M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-2M.JPG
999 2000/08/16 PH1617-2 Buy Wireless Bipolar Power Transistor 2W, 16 -1.7 GHz
1600 1700 25 2 10 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1617-2.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Designed for Linear Amplifier Applications

Diffused Emitter Ballasting Resistor

Common Emitter Configuration

Class A: +44 dBm typ. 3rd Order Intercept Point

Class AB: -33 dBc typ. 3rd IMD at 2 W PEP

Internal Input Impedance Matching

PH1617-2.JPG
999 2000/08/16 PH1214-100EL Buy Radar Pulsed Power Transistor 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
1200 1400 28 100 6 52 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-100EL.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Common Base Configuration

Broadband Class C Operation

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistors

Gold Metallization System

Internal Input and Output Impedance Matching

Hermetic Metal/Ceramic Package

RoHS Compliant

PH1214-100EL.JPG
999 2000/08/21 PH1214-80M Buy Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
1200 1400 40 80 7.9 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-80M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-80M.JPG
999 2000/08/17 PH3135-5M Buy Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100μs Pulse, 10% Duty
3100 3500 33 5 8.5 30 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH3135-5M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistor

Common Base Configuration

Broadband Class C Operation

PH3135-5M.JPG
999 2000/08/07 LF2805A Buy RF Power MOSFET Transistor 5W, 500-1000MHz, 28V
500 1000 28 5 10 50 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
LF2805A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Low Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS structure

500 MHz to 1400 MHz

Broadband Linear Operation

999 2000/08/07 PH1214-6M Buy Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100μs Pulse, 10% Duty
1200 1400 28 6 7 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-6M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-6M.JPG
999 2000/08/07 PH2226-50M Buy Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100μs Pulse, 10% Duty
2200 2600 36 50 8 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH2226-50M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2226-50M.JPG
999 2000/08/06 PH3135-90S Buy Radar Pulsed Power Transistor 90W, 3.1-3.5 GHz, 2μs Pulse, 10% Duty
3100 3500 36 90 7.5 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH3135-90S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistor

Broadband Class C Operation

Common Base Configuration

PH3135-90S.jpg
999 2000/08/07 UF2815B Buy 1 RF Power MOSFET Transistor 15W, 100-500 MHz, 28V
100 500 28 15 10 50 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
UF2815B.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Capacitances for Broadband Operations

DMOS Structure

100 MHz to 500 MHz Operation

RoHS Compliant

Low Noise Floor

Common Source Configuration

UF2815B.JPG
999 2000/07/30 PH1090-175L Buy Avionics Pulsed Power Transistor 175W, 1090 MHz, 250μs Pulse, 10% Duty
1030 1090 45 175 8.3 55 Bipolar
Flange Ceramic Pkg
Flange Mount
PH1090-175L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon MicrowavePower Transistor

RoHS Compliant

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

PH1090-175L.JPG
999 2000/07/27 PH2226-110M Buy Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100μs Pulse, 10% Duty M
2250 2550 36 110 7.4 40 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH2226-110M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

PH2226-110M.jpg
999 2000/07/27 DU28120V Buy RF Power MOSFET Transistor 120W, 2-175MHz, 28V
2 175 28 120 13 60 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU28120V.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS structure

RF PT SI - DU28120V.JPG
999 2000/07/26 PH2729-110M Buy Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
2700 2900 36 110 6.8 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH2729-110M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold metallization system

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2729-110M.jpg
999 2000/07/26 UF2805B Buy 1 RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
100 500 28 5 10 50 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
UF2805B.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

100 MHz to 500 MHz Operation

Lower Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS Structure

UF2805B.JPG
999 2000/07/26 UF2840P Buy RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
100 500 28 40 10 50 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
UF2840P.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS Structure

UF2840P.JPG
999 2000/07/26 PH2729-25M Buy Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
2700 2900 36 25 9.2 45 Bipolar
Flange Ceramic Pkg
Flange Mount
PH2729-25M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Gold Metallization System

Internal Input and Output Impedance Matching

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

PH2729-25M.JPG
999 2000/07/26 PH2731-5M Buy Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100μs Pulse, 10% Duty
2700 3100 36 5 7 30 Bipolar
Flange Ceramic Pkg
Flange Mount
PH2731-5M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Internal Input and Output Impedance Matching

RoHS Compliant

Hermetic Metal/Ceramic Package

PH2731-5M.JPG
999 2000/07/23 DU2805S Buy RF Power MOSFET Transistor 5W, 2-175MHz, 28V
2 175 28 5 11 55 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU2805S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

Lower noise figure than bipolar devices

High saturated output power

Lower capacitances for broadband operation

DMOS structure

RF PT- SI _ DU2805S.JPG
999 2000/07/23 DU2820S Buy RF Power MOSFET Transistor 200W, 2-175MHz, 28V
2 175 28 20 13 60 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU2820S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS structure

RF PT- SI DU2820S.JPG
999 2000/07/23 PH2731-20M Buy Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100μs Pulse, 10% Duty
2700 3100 36 20 8.2 45 Bipolar
Flange Ceramic Pkg
Flange Mount
PH2731-20M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2731-20M.JPG
999 2000/07/21 PH3135-20M Buy Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100μs Pulse, 10% Duty
3100 3500 36 20 7.5 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH3135-20M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistors

Broadband Class C Operation

Common Base Configuration

PH3135-20M.JPG
999 2000/07/21 DU28200M Buy RF Power MOSFET Transistor 200W, 2-175MHz, 28V
2 175 28 200 13 55 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU28200M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS structure

RF PT- SI _ DU28200M.JPG
999 2000/07/21 PH2731-75L Buy Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300μs Pulse, 10% Duty
2700 3100 36 75 7.45 38 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH2731-75L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2731-75L.JPG
999 2000/07/20 PH1090-75L Buy Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250μs Pulse, 10% Duty
1030 1090 45 75 9 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1090-75L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1090-75L.JPG
999 2000/07/21 PH1214-220M Buy Radar Pulsed Power Transistor 220W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
1200 1400 40 220 7.4 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-220M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Gold Metallization System

InternalInput and Output Impedance Matching

PH1214-220M.jpg
999 2000/07/21 UF2810P Buy RF Power MOSFET Transistor 10W, 100-500 MHz, 28V
100 500 28 10 10 50 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
UF2810P.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

100 MHz to 500 MHz operation

Lower noise floor

Common source configuration

Lower capacitances for broadband operation

DMOS structure

MACOM_general.png
999 2000/07/20 UF2840G Buy RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
100 500 28 40 10 50 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
UF2840G.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

100 MHz to 500 MHz Operation

Lower Noise Floor

Lower Capacitances for Broadband Operation

DMOS Structure

Common Source Configuration

UF2840G.JPG
999 2000/07/21 PH1090-350L Buy Avionics Pulsed Power Transistor 350W, 1090 MHz, 250μs Pulse, 10% Duty
1090 1090 45 350 8 55 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1090-350L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistor

High Efficiency Inter-Digitized Geometry

Broadband Class C operation

PH1090-350L.jpg
999 2000/07/20 UF28100M Buy RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
100 500 28 100 10 50 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
UF28100M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

RoHS Compliant

Lower Noise Figure than Competitive Devices

High Saturated Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

UF28100M.JPG
999 2000/07/21 UF2820P Buy RF Power MOSFET Transistor 20W, 100-500 MHz, 28V
100 500 28 20 10 50 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
UF2820P.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS Structure

UF2820P.JPG
999 2000/07/20 UF28100V Buy RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
100 500 28 100 10 50 DMOS
Flange Ceramic Pkg
Flange Mount
UF28100V.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-channel Enhancement Mode Device

High Saturated Output Power

Lower Capacitances for Broadband Operation ? High saturated output power ? Lower noise figure than competitive devices

DMOS Structure

Lower Noise Figure than Competitive Devices

UF28100V.JPG
999 2000/07/19 UF28150J Buy RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V
100 500 28 150 8 55 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
UF28150J.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
DMOS Structure

Common Source Configuration

Lower Capacitance for Broadband Operation

UF28150J.JPG
999 2000/07/19 PH1214-40M Buy Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
1200 1400 40 40 8.5 50 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH1214-40M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-40M.JPG
999 2000/07/18 DU2840S Buy RF Power MOSFET Transistor 40W, 2-175MHz, 28V
2 175 28 40 13 60 DMOS
Flange Ceramic Pkg
CeramicFlange Mount
DU2840S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

Lower noise figure than bipolar devices

High saturated output power

Lower capacitances for broadband operation

DMOS structure

MACOM_general.png
999 2000/07/19 DU2860U Buy RF Power MOSFET Transistor 60W, 2-175MHz, 28V
2 175 28 60 13 60 DMOS
Flange Ceramic Pkg
Ceramic Flange Mount
DU2860U.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

Lower Noise Figure than Bipolar Devices

RF PT- SI _ DU2860U.JPG
999 PHA3135-130M Buy Pulsed Power Pallet
3100 3500 36 130 7.4 35 Pallet
Pallet
Pallet
PHA3135-130M.pdf
Yes
NPN Silicon Bipolar Transistor

Plated Copper Flange

Easily Combined for High Power Transmitters

Duroid Circuit Board

Input and Output Matched to 50O

10 100
999 2017/05/01 PHA2731-190M Buy Radar Pulsed Power Amplifier
2700 3100 190 7.5 33 Pallet
Pallet
Pallet
PHA2731-190M.pdf
Yes
10 200
999 2018/06/05 MRF448A Buy The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
1 30 50 250 12 45 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
MRF448A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45%

100% tested for Load Mismatch at all Phase Angels with 3:1 VSWR

Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)

MRF448.png
999 2000/10/22 PH3135-65M Buy Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100μs Pulse, 10% Duty
3100 3500 65 7.5 35 Bipolar
Flange Ceramic Pkg
Ceramic Flange Mount
PH3135-65M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistor

Broadband Class C Operation

Common Base Configuration

PH3135-65M.jpg
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